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Abstract: Thin films of silicon oxide SiOx are mixtures of semiconductive c-Sinanoclusters NC embedded in an insulating g-SiO2 matrix. Tour et al. haveshown that a trenched thin film geometry enables the NC to form semiconductivefilamentary arrays when driven by an applied field. The field required to formreversible nanoscale switching networks NSN decreases rapidly within a fewcycles, or by annealing at 600 C in even fewer cycles, and is stable to 700C.Here we discuss an elastic mechanism that explains why a vertical edge acrossthe planar Si-SiOx interface is necessary to form NSN. The discussion showsthat the formation mechanism is intrinsic and need not occur locally at theedge, but can occur anywhere in the SiOx film, given the unpinned nanoscalevertical edge geometry.



Author: J. C. Phillips

Source: https://arxiv.org/







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