Investigation of oxidation-induced strain in a top-down Si nanowire platformReport as inadecuate




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Published in: Microelectronic Engineering (ISSN: 0167-9317), vol. 86, num. 7-9, p. 1961-1964 Elsevier, 2009

In this paper, we investigate the effect of different process parameters on oxidation-induced strain (OIS) into a doubly-clamped silicon nanowire FET to control and finally, enhance carrier mobility. Spacer technology together with sacrificial thermal oxidation were used to fabricate ≈100 nm wide Si NWs. The built-in tensile stress in the Si NWs was measured using micro-Raman spectroscopy and a maximum of 2.6 GPa was found.

Keywords: Oxidation-induced strain (OIS) ; Strain engineering ; Si nanowire ; FP7 ; Local oxidation ; Local stressor ; CMOS booster Reference NANOLAB-ARTICLE-2009-001doi:10.1016/j.mee.2009.03.086View record in Web of Science





Author: Najmzadeh, Mohammad; Bouvet, Didier; Dobrosz, Peter; Olsen, Sarah; Ionescu, Adrian Mihai

Source: https://infoscience.epfl.ch/record/138761?ln=en







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