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Published in: Physical Review B (ISSN: 2469-9969), vol. 94, num. 8, p. 081401 College Pk: Amer Physical Soc, 2016

We have evaluated as-grown MoS2 crystals, epitaxially grown on a monocrystalline sapphire by chemical vapor deposition (CVD), with direct electronic band-structure measurements by energy-filtered k-space photoelectron emission microscopy performed with a conventional laboratory vacuum ultraviolet He I light source under off-normal illumination. The valence states of the epitaxial MoS2 were mapped in momentum space down to 7 eV below the Fermi level. Despite the high nucleation density within the imaged area, the CVD MoS2 possesses an electronic structure similar to the free-standing monolayer MoS2 single crystal, and it exhibits hole effective masses of 2.41 +/- 0.05 m(0), and 0.81 +/- 0.05 m(0), respectively, at Gamma and K high-symmetry points that are consistent with the van der Waals epitaxial growth mechanism. This demonstrates the excellent ability of the MoS2 CVD on sapphire to yield a highly aligned growth of well-stitched grains through epitaxial registry with a strongly preferred crystallographic orientation.

Keywords: MoS2 ; Transition metal dichalcogenides ; CVD growth Reference EPFL-ARTICLE-221112doi:10.1103/PhysRevB.94.081401View record in Web of Science





Author: Kim, Hokwon; Dumcenco, Dumitru; Frégnaux, Mathieu; Benayad, Anass; Chen, Ming-Wei; Kung, Yen-Cheng; Kis, Andras; Renault, Olivier

Source: https://infoscience.epfl.ch/record/221112?ln=en







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