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GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology


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Publication Date: 2017-01-01

Journal Title: IEEE Transactions on Terahertz Science and Technology

Publisher: IEEE

Volume: 7

Issue: 1

Pages: 93-97

Language: English

Type: Article

This Version: AM

Metadata: Show full item record

Citation: Eblabla, A., Li, X., Wallis, D. J., Guiney, I., & Elgaid, K. (2017). GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology. IEEE Transactions on Terahertz Science and Technology, 7 (1), 93-97. https://doi.org/10.1109/TTHZ.2016.2618751

Abstract: In this paper, viable transmission media technology has been demonstrated for the first time on GaN on low-resistivity silicon) substrates (ρ < 40 $\Omega$·cm) at H-band frequencies (220-325 GHz). The shielded-elevated coplanar waveguide (CPW) lines employ a standard monolithic microwave integrated circuit compatible air bridge process to elevate the CPW traces above a 5-μm layer of benzocyclobutene on shielded metalized ground plates. An insertion loss of less than 2.3 dB/mm was achieved up to 325 GHz, compared with 27 dB/mm for CPW fabricated directly on the substrate. To prove the efficiency of the technology, a short-circuited stub filter with a resonant frequency of 244 GHz was used. The filter achieved an unloaded Q-factor of 28, along with an insertion loss of 0.35 dB and a return loss of-34 dB. To our knowledge, these results are the best reported to date for GaN-based technology.

Keywords: coplanar waveguides (CPWs), GaN high electron-mobility transistors (HEMTs), H-band, high-Q THz filters, low-resistivity silicon substrates, THz monolithic integrated circuits (TMICs)

Sponsorship: This work was supported by the EPSRC under Grant EP/N014820/1.

Identifiers:

External DOI: https://doi.org/10.1109/TTHZ.2016.2618751

This record's URL: https://www.repository.cam.ac.uk/handle/1810/264345



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Author: Eblabla, AMLi, XWallis, David JohnGuiney, IvorElgaid, K

Source: https://www.repository.cam.ac.uk/handle/1810/264345



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