Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu$ {2}$O Thin FilmsReport as inadecuate


Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu$ {2}$O Thin Films


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Publication Date: 2017-07-18

Journal Title: Scientific Reports

Publisher: Nature Publishing Group

Volume: 7

Number: 5766

Language: English

Type: Article

This Version: AM

Metadata: Show full item record

Citation: Han, S., & Flewitt, A. (2017). Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu$_{2}$O Thin Films. Scientific Reports, 7 (5766)https://doi.org/10.1038/s41598-017-05893-x

Abstract: A quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu$_{2}$O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found that carrier transport in as-deposited Cu$_{2}$O is governed by grain-boundary-limited conduction (GLC), while after high-temperature annealing, GLC becomes insignificant and trap-limited conduction (TLC) dominates. This suggests that the very low Hall mobility of as-deposited Cu$_{2}$O is due to significant GLC, and the Hall mobility enhancement by high-temperature annealing is determined by TLC. Evaluation of the grain size and the energy barrier height at the grain boundary shows an increase in the grain size and a considerable decrease in the energy barrier height after high-temperature annealing, which is considered to be the cause of the significant reduction in the GLC effect. Additionally, the density of copper vacancies was extracted; this quantitatively shows that an increase in annealing temperature leads to a reduction in copper vacancies.

Sponsorship: The support of this work by the Engineering and Physical Sciences Research Council (EPSRC) through project EP/M013650/1 is acknowledged.

Embargo Lift Date: 2100-01-01

Identifiers:

External DOI: https://doi.org/10.1038/s41598-017-05893-x

This record's URL: https://www.repository.cam.ac.uk/handle/1810/264749



Rights: Attribution 4.0 International

Licence URL: http://creativecommons.org/licenses/by/4.0/





Author: Han, S Flewitt, AJ

Source: https://www.repository.cam.ac.uk/handle/1810/264749



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