Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin FilmReport as inadecuate




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Advances in Condensed Matter PhysicsVolume 2012 2012, Article ID 587403, 4 pages

Research Article

Physics Department, Imam Khomeini International University, Qazvin, Iran

Physics Department, Islamic Azad University, Qom Branch, Qom, Iran

Received 10 January 2012; Revised 2 March 2012; Accepted 23 March 2012

Academic Editor: Mohindar S. Seehra

Copyright © 2012 M. R. Khanlary and E. Salavati. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Physical vapor deposition of tin-doped lead selenide Sn-PbSe thin films on SiO2 glass is described. Interaction of high-energy Ar

ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn-PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.





Author: M. R. Khanlary and E. Salavati

Source: https://www.hindawi.com/



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