ELECTROREFLECTANCE AND BAND STRUCTURE OF ZnSiAs2-xPx ALLOYSReport as inadecuate




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Abstract : We verify the Vegard law for ZnSiAs2-xPx solid solution. We follow by electroreflectance the Γ15 → Γ1 transitions in the entire range of composition and give the direct threshold Γ1 → Γ6 = 3.42 eV for ZnSiP2. From the quasicubic model we obtain the crystal field and the spin-orbit splitting which are compared with theory.





Author: J. Gallay A. Deschanvres S. Gaillard C. Alibert

Source: https://hal.archives-ouvertes.fr/



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