Feasible Time Evolution Model That Predicts Breakdown in Thin SiO2 Films within Unstressed Interval after Constant-Current StressReport as inadecuate




Feasible Time Evolution Model That Predicts Breakdown in Thin SiO2 Films within Unstressed Interval after Constant-Current Stress - Download this document for free, or read online. Document in PDF available to download.

Advances in Materials Science and Engineering - Volume 2015 2015, Article ID 909523, 8 pages -

Research ArticleORDIST, Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

Received 17 December 2014; Revised 5 February 2015; Accepted 6 February 2015

Academic Editor: Filippo Giannazzo

Copyright © 2015 Yasuhisa Omura. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper proposes a poststress time evolution model for sub-10-nm thick SiO2 films for degradation prediction and the extraction of trap-related parameters. The model is based on the understanding that the degradation in thin SiO2 films continues within the unstressed interval. The phenomenon is captured by an analytical expression that indicates that the time evolution of SiO2 film degradation roughly consists of two stages and that the degradation is more likely to occur if water molecules are present. It is demonstrated that the simple analytical model successfully reproduces measured results. It is also suggested that the degradation process considered here is related to oxygen diffusion in the resistive transition process.





Author: Yasuhisa Omura

Source: https://www.hindawi.com/



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