A new approach to photovoltaic junction formation by using pulse implantation doping techniqueReport as inadecuate




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Abstract : The paper presents the first demonstration of a new method of forming photovoltaic p-n junction in silicon by the « Pulse Implantation Doping PID » technique. In this technique, an intense ion pulse provides both the dose necessary for doping and the portion of energy required to recrystallize a damage-free, doped surface layer. The ion beam pulses within the range of one microsecond and of a current density within the range of several ka-cm2 are generated by a Rod Plasma Injector — the machine developed at INR — Swierk for the research in controlled ion beam fusion. The best solar cells obtained using a non-optimized PID process with boron as dopant have efficiencies of 4.5-4.7 %, without antireflection coating at AM1 condition.

Mots-clés : elemental semiconductors ion implantation p n homojunctions photovoltaic effects silicon solar cells





Author: J. Piekoszewski M. Gryziński J. Langner Z. Werner G.C. Huth

Source: https://hal.archives-ouvertes.fr/



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