Hot electrons injection into the oxide of a silicon-on-sapphire igfet at low operating voltageReport as inadecuate




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Abstract : An experimental method is described for measuring electrons injection from the electrical substrate of a silicon-on-sapphire IGFET into the gate insulator at low operating voltage. The aim of these experiments is to identify the relevant parameters which govern hot-electron related instability problems in IGFET. We notice that a significant injection probability P ≃ 10-10 exists for Vsubstrate as low as 2.2 V and Vgate = 2.5 V and for doping levels which are consistent with V.L.S.I. trends. Except for oxide field lower than 1 x 106 V cm-1, we found that a lucky-electron model describes the experimental data very well. Using this model, it is concluded that the equivalent collision mean free path is about 100 Å for electrons in S.O.S., and so, practically the same as the value observed for bulk silicon. This model may be useful for predicting the safe operating voltages of highly-doped submicron S.O.S. devices in order to avoid threshold instabilities.

Keywords : hot carriers insulated gate field effect transistors gate insulator injection probability collision mean free path SOS IGFET hot electrons injection lucky electron model





Author: M. Garrigues Y. Hellouin T. Pedron J.J. Urgell

Source: https://hal.archives-ouvertes.fr/



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