A model of the leakage current in n-channel silicon-on-sapphire mostsReport as inadecuate




A model of the leakage current in n-channel silicon-on-sapphire mosts - Download this document for free, or read online. Document in PDF available to download.



Abstract : The existence of a direct drain to source leakage current is experimentally demonstrated on n-channel SOS MOS transistors. The measured currents are shown to vary according to a model of an inversion channel at the sapphire interface working in the weak inversion regime. A value of interface state density at the silicon sapphire interface of 1012 cm-2 eV-1 is determined by static IV measurement.

Keywords : insulated gate field effect transistors interface electron states leakage currents semiconductor device models direct drain source leakage current n channel SOS MOS transistors inversion channel weak inversion regime interface state density semiconductor device





Author: P. Gentil

Source: https://hal.archives-ouvertes.fr/



DOWNLOAD PDF




Related documents