Permanent Data Storage in ZnO Thin Films by Filamentary Resistive SwitchingReport as inadecuate




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Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories RRAM. In this article, we provide a new insight into the applicability of resistive memories. The characteristics of non-rewritable resistive memories NRRM were investigated. Devices with Pt-ZnO-ITO architecture were prepared using magnetron sputtering, upon which various bipolar and unipolar resistive switching tests were performed. The results showed excellent distinction between the high resistance state HRS and low resistance state LRS, with RHRS-RLRS = 5.2 × 1011 for the Pt-ZnO-ITO device with deposition time of 1 h. All samples were stable for more than 104 s, indicating that the devices have excellent applicability in NRRMs.



Author: Adolfo Henrique Nunes Melo , Marcelo Andrade Macêdo

Source: http://plos.srce.hr/



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