MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP SystemReport as inadecuate

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Journal of NanomaterialsVolume 2015 2015, Article ID 436851, 6 pages

Research ArticleTemasek Laboratories, Nanyang Technological University TL@NTU, 50 Nanyang Drive, Singapore 637553

Received 13 August 2015; Revised 30 October 2015; Accepted 1 November 2015

Academic Editor: Meiyong Liao

Copyright © 2015 Nandan Singh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report charge-compensated modified uni-traveling-carrier photodiodes MUTC-PDs with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrication is completed with standard processing techniques with BCB passivation. DC and RF measurements are carried out using a single mode fiber at 1.55 μm. For a 24-μm-diameter device with diode ideality factor of 1.34, the dark current is 32.5 nA and the 3-dB bandwidth is ≫20 GHz at a reverse bias of 5 V, which are comparable to the theoretical values. High photocurrent of over 150.0 mA from larger diameter >60 μm devices is obtained. The maximum DC responsivity at 1.55 μm wavelength is 0.51 A-W, without antireflection coating. These photodiodes play a key role in the progress of the future THz communication systems.

Author: Nandan Singh, Charles Kin Fai Ho, Guo Xin Tina, Manoj Kumar Chandra Mohan, Kenneth Eng Kian Lee, Hong Wang, and Huy Quoc Lam



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