Approximation of the BTE by a Relaxation-time Operator: Simulations for a 50 nm-channel Si DiodeReport as inadecuate




Approximation of the BTE by a Relaxation-time Operator: Simulations for a 50 nm-channel Si Diode - Download this document for free, or read online. Document in PDF available to download.

VLSI Design - Volume 13 2001, Issue 1-4, Pages 349-354



Dipartimento di Matematica, Universitá di Catania, Italy

Department of Mathematics, University of Texas at Austin, USA

Department of Mathematics, University of Texas at Austin, USA

Division of Applied Mathematics, Brown University, Providence, RI 02912, USA

Departamento de Matematica Aplicada, Universidad de Granada, Granada 18071, Spain



Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In this work we present comparisons between DSMC simulations of the full BTE anddeterministic simulations of a relaxation-time approximation for a nowadays size Sidiode. We assume a field dependent relaxation time fitted to give the same drift speedmean velocity as DSMC simulations for bulk Si. We compute the density, meanvelocity, force field, potential drop, energy and I-V curves of both models and plot thepdf of the deterministic relaxation-time model. We also compare the results to augmenteddrift-diffusion models proposed in the literature to approximate the relaxationtime system in the quasi-ballistic regime. The quasi-ballistic and ballistic regimes aredistinguished by using local dimensionless parameters.





Author: Marcello A. Anile, Jose A. Carrillo, Irene M. Gamba, and Chi-Wang Shu

Source: https://www.hindawi.com/



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