CHARACTERIZATION OF STRESS FIELD AND ELECTRIC ACTIVITY OF DISLOCATIONS IN SEMICONDUCTORSReport as inadecuate




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Abstract : Optical and photoelectrical measurements can be used to characterize dislocations in semiconductors. Birefringence and excitonic photoconductivity in Cu2O crystals are interpreted : anisotropic photocurrent maxima are due to dissociation of excitons by internal electric fields resulting from specific arrangements of dislocations of pile-up type. The role of dislocations can be interpreted in the same way in other semiconducting compounds : CuCl and CuBr in particular.





Author: A. Haydar A. Coret

Source: https://hal.archives-ouvertes.fr/



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