Ellipsometric investigations of oxide films on Ga AsReport as inadecuate




Ellipsometric investigations of oxide films on Ga As - Download this document for free, or read online. Document in PDF available to download.



Abstract : The optical constants of GaAs substrates have been determined by ellipsometry for λ = 5 461 Å. They are n = 3.923 and k = 0.304. The fundamental equation of ellipsometry was solved for the case of transparent films on GaAs. Investigations on thermally oxidized GaAs revealed that the resulting film has a complex structure, with an accumulation of arsenic at the GaAs-film interface.

Keywords : gallium compounds optical films





Author: Karl H. Zaininger Akos G. Revesz

Source: https://hal.archives-ouvertes.fr/



DOWNLOAD PDF




Related documents