Design of a lattice-matched III-V-N-Si photovoltaic tandem cell monolithically integrated on silicon substrateReport as inadecuate




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1 FOTON - Fonctions Optiques pour les Technologies de l-informatiON 2 IRDEP - INSTITUT DE RECHERCHE ET DEVELOPPEMENT SUR L-ENERGIE PHOTOVOLTAÏQUE

Abstract : In this paper, we present a comprehensive study of high efficiencies tandem solar cells monolithically grown on a silicon substrate using GaAsPN absorber layer. InGaAsN quantum dots and GaAsPN quantum wells have been grown recently on GaP-Si susbstrate for applications related to light emission. For photovoltaic applications, we consider the GaAsPN diluted nitride alloy as the top junction material due to both its perfect lattice matching with Si and ideal bandgap energy for current generation in association with the Si bottom cell. Numerical simulation of the top cell is performed. The effect of layer thicknesses and doping on the cell efficiency are evidenced. In these structures a tunnel junction TJ is needed to interconnect both the top and bottom sub-cells. We compare the simulated performances of different TJ structures and show that the GaPn+-Sip+ TJ is promising to improve performances of the current-voltage characteristic.

Keywords : Photonics on silicon Tandem solar cells tunnel junctions numerical simulation





Author: Alain Rolland - Laurent Pedesseau - Jacky Even - Samy Almosni - Cédric Robert - Charles Cornet - Jean-Marc Jancu - Jamal Benhlal

Source: https://hal.archives-ouvertes.fr/



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