EPITAXIAL PZT FILMS DEPOSITED BY PULSED LASER DEPOSITION FOR MEMS APPLICATIONReport as inadecuate




EPITAXIAL PZT FILMS DEPOSITED BY PULSED LASER DEPOSITION FOR MEMS APPLICATION - Download this document for free, or read online. Document in PDF available to download.

1 Department of Materials Processing, Graduate School of Engineering 2 MEMS ;Packaging Research Laboratory

Abstract : PbZr0.52Ti0.48O3 PZT thin films were in situ deposited by pulsed laser deposition PLD on Pt-Ti-SiO2-Si substrates using a template layer derived by sol-gel method. A 0.1-µm-thick PZT layer with 111 or 100-preferred orientation was first deposited onto Pt-Ti-SiO2-Si substrates using the sol-gel method, and than a PZT layer with thickness of 1µm was in situ deposited by PLD on the above-mentioned PZT layer. The crystalline phases and the preferred orientations of the PZT films were investigated by X-ray diffraction analysis. Surface and cross-sectional morphologies were observed by scanning electron microscopy and transmission electron microscopy. The electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The preferred orientation of the films can be controlled using the template layer derived by the sol-gel method. The deposition temperature required to obtain the perovskite phase in this process is approximately 460°C, and is significantly lower than that in the case of direct film deposition by PLD on the Pt-Ti-SiO2-Si substrates. Keywords : lead zirconate titanate PZT, thin film, sol-gel method, laser ablation, electrical properties

Keywords : Lead zirconate titanate sol-gel method pulsed laser deposition crystalline phases microstructure ferroelectric properties





Author: R. Wang - H. Kokawa - R. Maeda -

Source: https://hal.archives-ouvertes.fr/



DOWNLOAD PDF




Related documents