A Study of Self-Interstitial Atom in W by Means of Low-Temperature IrradiationsReport as inadecuate




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Abstract : To clarify the migration behavior of self-interstitial atoms SIA-s in W, we have performed anelasticity measurements of W after 2 MeV electron irradiation at 5 K and after 20 MeV proton irradiation at 1.5 K. Dislocation pinning results observed during irradiation clearly show that free SIA-s in W migrate below 1.5 K. Warm-up measurements after irradiation reveal higher temperature pinnings which all show no dose shift as reported for substages of the stage I in the electrical resistivity measurements after low-temperature electron irradiation, suggesting that these pinnings are due to SIA-s released from traps. After the present results, one can Say that the migration temperature of free SIA-s in the refractory BCC metals is, in general, very low as below 1.5 K in W and below 6 K in Nb and Ta with the exception of about 40 K in Mo.





Author: H. Tanimoto H. Mizubayashi H. Nishimura S. Okuda

Source: https://hal.archives-ouvertes.fr/



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