Static Current-Voltage Characteristics of Silicon n -i-n Resistors at Liquid Helium TemperaturesReport as inadecuate




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Abstract : The behaviour of the I-V characteristics is investigated in n+-i-n+ highly compensated Si resistors at temperatures 4.2-45K. The conduction mechanisms are discussed in detail here. The prebreakdown and breakdown regions of I-V characteristics were simulated by a one-dimensional model including the evidence of impurity high compensation and freeze out effects as well as the shallow-dopants impact ionisation by the injected hot carriers into the base. Negative resistance S-type phenomena are also observed on the characteristics for high injection current densities.





Author: D. Tsamakis N. Glezos

Source: https://hal.archives-ouvertes.fr/



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