EVIDENCE FOR FREE CARBON IN AMORPHOUS OMCVD SILICON-RICH SixC1-x COATINGSReport as inadecuate




EVIDENCE FOR FREE CARBON IN AMORPHOUS OMCVD SILICON-RICH SixC1-x COATINGS - Download this document for free, or read online. Document in PDF available to download.



Abstract : Silicon-rich SixC1-x layers have been deposited by OMCVD at low pressure in the temperature range 800-1000°C using the organometallic compound SiEt4 for both Si and C source. A Si enrichment of these amorphous SixC1-x coatings was obtained by addition of SiH4 to the gas-phase. The influence of this silane partial pressure increase on the growth rate, the composition and optical properties of the films has been investigated. In spite of the silicon excess, evidence for free carbon was found both in the variation of the optical band gap and the IR spectra. The XPS X-ray Photoelectron Spectroscopy analysis argues also for a heterogeneous microstructure for these amorphous ceramic thin films.





Author: A. Mestari F. Maury R. Morancho

Source: https://hal.archives-ouvertes.fr/



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