Growth Of Antimony Doped P-type Zinc Oxide Nanowires For OptoelectronicsReport as inadecuate


Growth Of Antimony Doped P-type Zinc Oxide Nanowires For Optoelectronics


Growth Of Antimony Doped P-type Zinc Oxide Nanowires For Optoelectronics - Download this document for free, or read online. Document in PDF available to download.

In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate ZnNO32, hexamethylenetetramine HMTA and polyethylenemine 800 Mw PEI is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide NaOH, glycolic acid C2H4O3 and antimony acetate SbCH3COO3 in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 ?m have grown from the ZnO seed layer.



Georgia Tech Patents -



Author: Wang, Zhong Lin - Pradel, Ken - -

Source: https://smartech.gatech.edu/







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