DEGRADATION OF SHORT-CHANNEL MOS TRANSISTORS STRESSED AT LOW TEMPERATUREReport as inadecuate




DEGRADATION OF SHORT-CHANNEL MOS TRANSISTORS STRESSED AT LOW TEMPERATURE - Download this document for free, or read online. Document in PDF available to download.



Abstract : Hot-carrier stressing was carried out on 1 µm n-type MOSFETs at 77 K with fixed drain voltage Vd = 5.5 V and gate voltage Vg varying from 1.5 to 6.5 V. It was found that the maximum transconductance degradation and threshold voltage shift do not occur at the same Vg. This behavior is explained by the localized nature of induced defects which is also responsible for a distortion of the transconductance curves and even a slight temporary increase in the transconductance during stress. An anomalous increase in the saturation transconductance is also reported.





Author: C. Nguyen-Duc S. Cristoloveanu G. Reimbold J. Gautier

Source: https://hal.archives-ouvertes.fr/



DOWNLOAD PDF




Related documents