High-performance C-60 n-channel organic field-effect transistors through optimization of interfacesReport as inadecuate


High-performance C-60 n-channel organic field-effect transistors through optimization of interfaces


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High-performance C-60 organic field-effect transistors OFETs have been obtained by engineering the essential electrode-semiconductor and dielectric-semiconductor interfaces. By using calcium Ca as the source and drain electrodes, the width-normalized contact resistance RCW at the electrode-semiconductor interface for devices with channel lengths ranging from 200 down to 25 mu m could be reduced to a constant value of 2 k Omega cm at a gate-source voltage V-GS of 2.6 V, leading to electrical properties that are dominated by gate-modulated resistance of the channel as in conventional metal-oxide-semiconductor field-effect transistors. Channel length scaling of the source-drain current and transconductance is observed. Average charge mobility values of 2.5 cm2-V s extracted at V-GS < 5 V are found independent of channel length within the studied range. Besides high mobility, overall high electrical performance and stability at low operating voltages are demonstrated by using a 100-nm-thick high-kappa gate dielectric layer of aluminum oxide Al₂O₃ fabricated by atomic layer deposition and modified with divinyltetramethyldisiloxane-bis benzocyclobutene. The combined operating properties of these OFETs, obtained in a N-2-filled glovebox, are comparable to the best p-channel OFETs and outperform those of amorphous silicon thin-film transistors.



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Author: Kippelen, Bernard - Zhang, Xiaohong - -

Source: https://smartech.gatech.edu/







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