Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printingReport as inadecuate


Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printing


Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printing - Download this document for free, or read online. Document in PDF available to download.

Transparent organic field-effect transistors based on pentacene were fabricated on indium tin oxide ITO-coated glass using ITO as the gate electrode, Al2O3 grown by atomic layer deposition as the gate insulator, and an inkjet-printed conducting polymer poly3,4-ethylenedioxythiophene:poly4-styrenesulphonate as the source and drain electrodes. The transistors combine an overall high transmittance 84% in the channel and 78% through source-drain electrodes in the visible region, a field-effect mobility value of 0.3 cm2-V s, a threshold voltage of -0.2 V, a subthreshold slope of 0.9 V-decade, and an on-off current ratio of 105.



COPE Publications -



Author: Zhang, Xiaohong - Lee, S. M. - Domercq, Benoit - Kippelen, Bernard - -

Source: https://smartech.gatech.edu/







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