Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistorsReport as inadecuate


Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors


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We report on solution-processible high permittivity nanocomposite gate insulators based on BaTiO₃ nanoparticles, surface-modified with a phosphonic acid, in poly4-vinylphenol for organic field-effect transistors. The use of surface-modified BaTiO₃ nanoparticles affords high quality nanocomposite thin films at large nanoparticle volume fractions up to 37 vol % with a large capacitance density and a low leakage current 10⁻⁸ A-cm². The fabricated pentacene field-effect transistors using these nanocomposites show a large on-off current ratio I on-off 10 ⁴- 10 ⁶ due to the high capacitance density and small leakage current of the gate insulator.



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Author: Kim, P. - Domercq, Benoit - Jones, Simon C. - Hotchkiss, Peter J. - Marder, Seth R. - Kippelen, Bernard - Perry, Joseph W. - Zhan

Source: https://smartech.gatech.edu/







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