CONDITIONS FOR OBTAINING IN-SITU PHOSPHORUS DOPED LPCVD POLYSILICON LAYERS WITH HIGH CONDUCTIVITY ONTO GLASS SUBSTRATESReport as inadecuate




CONDITIONS FOR OBTAINING IN-SITU PHOSPHORUS DOPED LPCVD POLYSILICON LAYERS WITH HIGH CONDUCTIVITY ONTO GLASS SUBSTRATES - Download this document for free, or read online. Document in PDF available to download.



Abstract : In order to obtain low in-situ phosphorus doped LPCVD polysilicon thin films having good conductivity, it is necessary to obtain an amorphous layer which is crystallized after deposition. This condition limits the choice of both temperature and pressure. An appropriate selection of deposition parameters has led to a phosphorus atom incorporation in the range 2 x 1018 - 2 x 1020 for a phosphine-silane mole ratio in the range 4 x 10-6 - 4 x 10-4. With these conditions, the resistivity varies from 1 to 2 x 10-3 MATHcm.





Author: M. Sarret A. Liba O. Bonnaud M. Mokhtari B. Fortin

Source: https://hal.archives-ouvertes.fr/



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