Effect of Temperature Dependence on Electrical Characterization of p-n GaN Diode Fabricated by RF Magnetron SputteringReport as inadecuate




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The p-n junction GaN diodes were all fabricated by sputtering technique with cermet targets for p- and n-type GaN and metal targets for electrodes. The interface of these p-n junction GaN diodes examined by high-resolution transition electron microscopy was clear and distinguishable. Lattice images identified the complete dissolution of Mg into the Ga site. At the room temperature, the diode had the turn-on voltage of 2.2 V, the leakage current of 2.2 –7 A, the breakdown voltage of



Author: Thi Tran Anh Tuan1,2, Dong-Hau Kuo1*, Cheng-Che Li1, Guan-Zhang Li1

Source: http://www.scirp.org/



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