Study of the Electron Mean Free Path by Ballistic Electron Emission MicroscopyReport as inadecuate




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Abstract : Ballistic Electron Emission Microscopy allows buried interfaces to be characterized with a subnanometer resolution. Additionnally, the electron mean free path in a thin metal layer can thus be investigated with a good level of accuracy. This paper presents the latest results in this field for an Au-n-Si Schottky diode. A discussion is also proposed to link these results with the still controversial interpretations of BEEM contrasts.





Author: C. Girardin R. Coratger R. Pechou F. Ajustron J. Beauvillain

Source: https://hal.archives-ouvertes.fr/



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