Measurements and quantitative model for edge influence on bulk resistance for circular semiconductor samplesReport as inadecuate




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Abstract : The study of any two terminal device or sample always involves the presence of a bulk resistance. In fact, this resistance depends on the geometry and on edge effects due to the finite size of samples. The former studies are based upon theoretical hypotheses, mathematical approximations and have not been fully checked experimentally : these formulations are not really usable quantitatively. Starting from potential measurements on circular samples, we present a model for edge effects giving a quantitative formulation, along the contacts axis, that fits well the experimental results. Then, we calculate the edge effect influence on bulk resistance.

Keywords : electrical conductivity of crystalline semiconductors and insulators elemental semiconductors metal semiconductor metal structures silicon circular Si samples bulk resistance circular semiconductor edge effects potential measurements contact axis Si





Author: J.J. Marchand G. Chen P. Pinard

Source: https://hal.archives-ouvertes.fr/



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