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Abstract : The origin of visible luminescence bands in amorphous silicon nitride is investigated by using time-decaying anti-Stokes luminescence methods with infra-red stimulation, in conjunction with standard UV excitation techniques. The optical depths of three centres are measured as being 1.47±0.03 eV from the conduction band and, 2.1± 0.2 and 1.6±0.2 eV from the valence band. It is argued that these defects are respectively the negatively and positively charged silicon dangling bond centres, and the self trapped hole. The luminescence results are best explained by allowing the dangling bond to have a positive correlation energy, U. Consideration of the time decay characteristics of the luminescence suggests that there is a wide range of intra-defect pair separations.





Author: N. Poolton Y. Cros

Source: https://hal.archives-ouvertes.fr/



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