A Review of Si MOS-gated Power Switches and PiN RectifiersReport as inadecuate

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Automatika : journal for control, measurement, electronics, computing and communications, Vol.53 No.2 June 2012. -

Revolutionary advances and developments have been made in power semiconductor device technologies during the last decades which have allowed the improvement of power electronic systems in terms of their efficiency and reliability. The advent of MOS-gated power switches such as the power MOSFET and the IGBT showing high input impedance has been a real breakthrough in the design and fabrication of power electronic systems. This paper reviews the recent progress in the development of Si MOS-gated power devices and rectifiers. The evolution of these devices’ technologies together with the introduction of revolutionary device concepts is also discussed. Concretely, the introduction of trench technologies for power MOSFETs and the use of the super-junction concept for breaking the 1D-silicon limit are highlighted. Developments in IGBTs such as those based on the use of thin wafers and strategies for optimising the plasma distribution in PT IGBTs during the on-state are also addressed. Finally, advances in PiN diode technologies including new concepts for both the anode and the cathode structures are also reviewed. These approaches have allowed the reduction of the PiN total losses and a soft reverse recovery behaviour, leading to a more rugged device.

MOS-gated power devices; power MOSFETs; CoolMOS; super-junction devices; IGBTs; PiN rectifiers

Author: José Rebollo - ; Instituto de Microelectrónica de Barcelona IMB, Centro Nacional de Microelectrónica CNM-CSIC, Campus UAB, 081

Source: http://hrcak.srce.hr/


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