Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFETReport as inadecuate




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A silicon carbide SiC vertical channel junction fieldeffect transistor VJFET was fabricated based on in-house SiC epitaxial waferwith trenched and implanted method. Its forward drain current is in excess of 3.12 A170 W-cm2 with a current gain of ID-IG = 19746at gate bias VG = 3 V and drain bias VD = 5.5 V. TheSiC VJFET device’s related specific on-resistance 54 mΩ·cm2. TheBV gain is 250 V with Vg from -10 V to -4 V and is350 V with Vg from -4 V to -2 V. Self-alignedfloating guard rings provide edge termination that blocks 3180V at a gate biasof ?14 V and a drain-current density of 1.53 mA-cm2.

KEYWORDS

4H-SiC; VJFET; Ohmic; Trench; Implant

Cite this paper

G. Chen, S. Bai, Y. Tao and Y. Li -Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET,- Energy and Power Engineering, Vol. 5 No. 4B, 2013, pp. 1284-1287. doi: 10.4236-epe.2013.54B243.





Author: Gang Chen, Song Bai, Yonghong Tao, Yun Li

Source: http://www.scirp.org/



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