Effect of Copper Doping on Structural, Dielectric and DC Electrical Resistivity Properties of BaTiO3Report as inadecuate




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The modified BaTiO3 ferroelectric materials are suitable forpyroelectric applications. This paper reports the structural, dielectric andelectrical properties on copper influence in BaTiO3 when it wassubstituted site -A- of perovskite structureof BaTiO3. Copperhas been chosen for modified BaTiO3 with different concentrationswith stoichiometry Ba1-xCuxTiO3, wherex = 0.01%, 0.02%, 0.03% and 0.04%. The X-ray diffraction patterns of the samples dopedwith different composition of CuO are found to be that the positions andintensities of the diffraction peaks are similar and no secondary phases were observed.The Curie’s temperature Tcfor all CuO doped BaTiO3 with were found to be in the range of 120°Cto 125°C. The frequency dependence of relative permittivity εr anddielectric loss Tanδ of Ba1-xCuxTiO3 samplesat room temperature were reported in the range 100 KHz - 1 MHz. Thetemperature dependence of D.C electrical resistivity studies were reported forall samples indicating that the participation of Cu2+-Cu+ ions in theconduction process around their Curie’s temperature.

KEYWORDS

Barium Titanate; Copper Doping; Dielectric Properties; DC Electrical Resistivity; Frequency Dependence

Cite this paper

M. Rao, K. Ramesh, M. Ramesh and B. Rao -Effect of Copper Doping on Structural, Dielectric and DC Electrical Resistivity Properties of BaTiO3,- Advances in Materials Physics and Chemistry, Vol. 3 No. 1, 2013, pp. 77-82. doi: 10.4236-ampc.2013.31012.





Author: Moganti Venkata Someswara Rao, Kocharlakota Venkata Ramesh, Majeti Naga Venkata Ramesh, Bonthula Srinivasa Rao

Source: http://www.scirp.org/



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