Spin-Polarized Tunneling as a probe of Ga,MnAs electronic properties - Condensed Matter > Materials ScienceReport as inadecuate




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Abstract: We present magnetic and tunnel transport properties ofGa,MnAs-In,GaAs-Ga,MnAs structure before and after adequate annealingprocedure. The conjugate increase of magnetization and tunnel magnetoresistanceobtained after annealing is shown to be associated to the increase of bothexchange energy $\Delta$$ {exch}$ and hole concentration by reduction of the Mninterstitial atom in the top magnetic electrode. Through a 6x6 band k.p model,we established general phase diagrams of tunneling magnetoresistance TMR andtunneling anisotropic magnetoresistance TAMR \textit{vs.} Ga,MnAs Fermienergy E$ F$ and spin-splitting parameter B$ G$. This allows to give arough estimation of the exchange energy $\Delta$$ {exch}$=6B$ G$$\simeq$120 meVand hole concentration p$\simeq1.10^{20}$cm$^{-3}$ of Ga,MnAs and beyondgives the general trend of TMR and TAMR \textit{vs.} the selected hole bandinvolved in the tunneling transport.



Author: M.Elsen, H. Jaffres, R. Mattana, L. Thevenard, A. Lemaitre, J.-M. George

Source: https://arxiv.org/







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