A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMIReport as inadecuate




A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI - Download this document for free, or read online. Document in PDF available to download.

Microelectronics EMC Group, Eln. Department, Politecnico di Torino, Corso Duca degli Abruzzi, 24, I-10129 Torino, Italy





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Abstract This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor. View Full-Text

Keywords: current sensor; CMOS integrated circuit; smart power; electromagnetic interference EMI; electromagnetic compatibility EMC; senseFET; miller effect current sensor; CMOS integrated circuit; smart power; electromagnetic interference EMI; electromagnetic compatibility EMC; senseFET; miller effect





Author: Orazio Aiello * and Franco Fiori

Source: http://mdpi.com/



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