Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-ProcessReport as inadecuate




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1

Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402, Taiwan

2

Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, Tamsui, 251, Taiwan





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Abstract The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 mm complementary metal oxide semiconductor CMOS process without any post-process. The finite element method FEM software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV-T at the supply current of 4 mA. View Full-Text

Keywords: magnetic sensor; magneto-transistor; CMOS magnetic sensor; magneto-transistor; CMOS





Author: Jian-Zhi Tseng 1, Chyan-Chyi Wu 2 and Ching-Liang Dai 1,*

Source: http://mdpi.com/



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