Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon WaferReport as inadecuate




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Department of Electrical and Electronic Engineering, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan





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Academic Editor: Yoshiteru Ishida

Abstract Inexpensive high-resolution silicon Si X-ray detectors are required for on-site surveys of traces of hazardous elements in food and soil by measuring the energies and counts of X-ray fluorescence photons radially emitted from these elements. Gated silicon drift detectors GSDDs are much cheaper to fabricate than commercial silicon drift detectors SDDs. However, previous GSDDs were fabricated from \10\-k\\Omega \cdot\cm Si wafers, which are more expensive than \2\-k\\Omega \cdot\cm Si wafers used in commercial SDDs. To fabricate cheaper portable X-ray fluorescence instruments, we investigate GSDDs formed from \2\-k\\Omega \cdot\cm Si wafers. The thicknesses of commercial SDDs are up to \0.5\ mm, which can detect photons with energies up to \27\ keV, whereas we describe GSDDs that can detect photons with energies of up to \35\ keV. We simulate the electric potential distributions in GSDDs with Si thicknesses of \0.5\ and \1\ mm at a single high reverse bias. GSDDs with one gate pattern using any resistivity Si wafer can work well for changing the reverse bias that is inversely proportional to the resistivity of the Si wafer. View Full-Text

Keywords: gated silicon drift detector; silicon drift detector; low-cost X-ray detector; thick X-ray detector gated silicon drift detector; silicon drift detector; low-cost X-ray detector; thick X-ray detector





Author: Hideharu Matsuura * , Shungo Sakurai, Yuya Oda, Shinya Fukushima, Shohei Ishikawa, Akinobu Takeshita and Atsuki Hidaka

Source: http://mdpi.com/



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