Amorphous Silicon p-i-n Structure Acting as Light and Temperature SensorReport as inadecuate




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1

Department of Information Engineering, Electronics and Telecommunications -La Sapienza- University of Rome, via Eudossiana 18, 00184 Rome, Italy

2

Department of Astronautics, Electrical and Energetic Engineering -La Sapienza- University of Rome, via Eudossiana 18, 00184 Rome, Italy



These authors contributed equally to this work.





*

Author to whom correspondence should be addressed.



Academic Editor: Vittorio M.N. Passaro

Abstract In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped-intrinsic-n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA-W at 510 nm and temperature sensitivity equal to 3.2 mV-K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW-K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K-µW results in the temperature measurement when a forward bias current higher than 25 µA-cm2 is applied. View Full-Text

Keywords: temperature sensors; photosensors; amorphous silicon devices; Lab-on-Chip temperature sensors; photosensors; amorphous silicon devices; Lab-on-Chip





Author: Giampiero de Cesare 1,†,* , Augusto Nascetti 2,† and Domenico Caputo 1,†

Source: http://mdpi.com/



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