Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene GrowthReport as inadecuate


Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth


Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth - Download this document for free, or read online. Document in PDF available to download.

1

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

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Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

3

Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China





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Academic Editor: Thomas Nann

Abstract Nano-textured 4H–SiC homoepitaxial layers NSiCLs were grown on 4H–SiC0001 substrates using a low pressure chemical vapor deposition technique LPCVD, and subsequently were subjected to high temperature treatments HTTs for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were about submicrons in-plane and about 100 nanometers out-of-plane in size. After HTTs under vacuum, pattern sizes reduced, and the sizes of the remains were inversely proportional to the treatment time. Referring to Raman spectra, the establishment of multi-layer graphene MLG on NSiCL surfaces was observed. MLG with sp2 disorders was obtained from NSiCLs after a high temperature treatment under vacuum at 1700 K for two hours, while MLG without sp2 disorders was obtained under Ar atmosphere at 1900 K. View Full-Text

Keywords: nano-textured; 4H–SiC; morphology; graphene; evolution nano-textured; 4H–SiC; morphology; graphene; evolution





Author: Xingfang Liu 1,* , Yu Chen 2,* , Changzheng Sun 3, Min Guan 1, Yang Zhang 1, Feng Zhang 1, Guosheng Sun 1 and Yiping Zeng 1,2

Source: http://mdpi.com/



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