Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible SubstratesReport as inadecuate


Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates


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Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung City 807, Taiwan





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Academic Editors: Ming-Tsang Lee and Thomas Nann

Abstract An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga–doped ZnO films deposited on polyimide PI flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction XRD analysis results show that all of the films have a strong 002 Ga doped ZnO GZO preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness. View Full-Text

Keywords: annealing temperature effect; Ti-Ga; flexible substrate; polyimide annealing temperature effect; Ti-Ga; flexible substrate; polyimide





Author: Tao-Hsing Chen * and Ting-You Chen

Source: http://mdpi.com/



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