Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and ChallengesReport as inadecuate




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1

Spintronics Interdisciplinary Centre & School of Electronic and Information Engineering, Beihang University, Beijing 10191, China

2

Institute of Fundamental Electronics IEF, University of Paris-Sud, Orsay 91405, France





*

Author to whom correspondence should be addressed.



Academic Editor: Miko Elwenspoek

Abstract Magnetic tunnel junction MTJ, which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory STT-MRAM has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy PMA based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB-MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA. View Full-Text

Keywords: magnetic tunnel junction; perpendicular magnetic anisotropy; spin transfer torque; memory; power consumption; reliability magnetic tunnel junction; perpendicular magnetic anisotropy; spin transfer torque; memory; power consumption; reliability





Author: Mengxing Wang 1, Yue Zhang 1, Xiaoxuan Zhao 1 and Weisheng Zhao 1,2,*

Source: http://mdpi.com/



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