Dynamic Wet Etching of Silicon through Isopropanol Alcohol EvaporationReport as inadecuate




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1

Instituto de Engenharia de Sistemas de Computadores–Microsystems and Nanotechnology INESC–MN, Rua Alves Redol, Lisboa 1000-029, Portugal

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Microelectromechanical Systems Research Unit CMEMS-UMinho, Universidade do Minho, Campus de Azurem, Guimarães 4800-058, Portugal

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Departamento de Física–Instituto Superior Técnico–Universidade de Lisboa, Av. Rovisco Pais, Lisboa 1000, Portugal





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Academic Editor: Joost Lötters

Abstract In this paper, Isopropanol IPA availability during the anisotropic etching of silicon in Potassium Hydroxide KOH solutions was investigated. Squares of 8 to 40 µm were patterned to 100 oriented silicon wafers through DWL Direct Writing Laser photolithography. The wet etching process was performed inside an open HDPE High Density Polyethylene flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL-min and 0.175 mL-min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM Scanning Electron Microscopy analysis demonstrates a correlation between microloading effects as a consequence of structure spacing and the angle formed towards the 100 plane. View Full-Text

Keywords: isopropanol evaporation; isopropanol availability; silicon wet etching; microloading effect isopropanol evaporation; isopropanol availability; silicon wet etching; microloading effect





Author: Tiago S. Monteiro 1,2, Pamakštys Kastytis 1, Luís M. Gonçalves 2, Graça Minas 2,* and Susana Cardoso 1,3

Source: http://mdpi.com/



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