Element Specific Versus Integral Structural and Magnetic Properties of Co:ZnO and Gd:GaN Probed with Hard X-ray Absorption SpectroscopyReport as inadecuate


Element Specific Versus Integral Structural and Magnetic Properties of Co:ZnO and Gd:GaN Probed with Hard X-ray Absorption Spectroscopy


Element Specific Versus Integral Structural and Magnetic Properties of Co:ZnO and Gd:GaN Probed with Hard X-ray Absorption Spectroscopy - Download this document for free, or read online. Document in PDF available to download.

Fakultät für Physik, Universität Duisburg-Essen, Lotharstr. 1, D-47057 Duisburg, Germany





Abstract Dilute magnetic semiconductors DMS are envisioned as sources of spin-polarized carriers for future semiconductor devices which simultaneously utilize spin and charge of the carriers. The hope of discovering a DMS with ferromagnetic order up to room temperature still motivates research on suitable DMS materials. Two candidate wide-band gap DMS are Gd:GaN and Co:ZnO. We have used hard X-ray absorption spectroscopy XAS and in particular X-ray linear dichroism XLD and X-ray magnetic circular dichroism XMCD to study both DMS materials with element specificity and compare these findings with results from integral SQUID magnetometry as well as electron paramagnetic resonance EPR. View Full-Text

Keywords: dilute magnetic semiconductors; magnetic properties; X-ray absorption spectroscopy dilute magnetic semiconductors; magnetic properties; X-ray absorption spectroscopy





Author: Andreas Ney

Source: http://mdpi.com/



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