Carrier States in Ferromagnetic Semiconductors and Diluted Magnetic Semiconductors—Coherent Potential Approach—Report as inadecuate


Carrier States in Ferromagnetic Semiconductors and Diluted Magnetic Semiconductors—Coherent Potential Approach—


Carrier States in Ferromagnetic Semiconductors and Diluted Magnetic Semiconductors—Coherent Potential Approach— - Download this document for free, or read online. Document in PDF available to download.

Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi, 243-0292, Japan





Abstract The theoretical study of magnetic semiconductors using the dynamical coherent potential approximation dynamical CPA is briefly reviewed. First, we give the results for ferromagnetic semiconductors FMSs such as EuO and EuS by applying the dynamical CPA to the s-f model. Next, applying the dynamical CPA to a simple model for A1−xMnxB-type diluted magnetic semiconductors DMSs, we show the results for three typical cases to clarify the nature and properties of the carrier states in DMSs. On the basis of this model, we discuss the difference in the optical band edges between II-V DMSs and III-V-based DMSs, and show that two types of ferromagnetism can occur in DMSs when carriers are introduced. The carrier-induced ferromagnetism of Ga1−xMnxAs is ascribed to a double-exchange DE-like mechanism realized in the magnetic impurity band-or in the band tail. View Full-Text

Keywords: magnetic semiconductor; coherent potential approximation CPA; exchange interaction; carrier-induced ferromagnetism magnetic semiconductor; coherent potential approximation CPA; exchange interaction; carrier-induced ferromagnetism





Author: Masao Takahashi

Source: http://mdpi.com/



DOWNLOAD PDF




Related documents