Teflon-SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment ProcessReport as inadecuate




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1

Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43 Section 4, Keelung Road, Taipei 106, Taiwan

2

Department of Electronic Engineering, National Taiwan University of Science and Technology, 43 Section 4, Keelung Road, Taipei 106, Taiwan

3

Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei 106, Taiwan

4

Department of Electrical Engineering, Lee-Ming Institute of Technology, New Taipei City 243, Taiwan





*

Author to whom correspondence should be addressed.



Academic Editor: Martin Frank

Abstract This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide a-IGZO thin-film transistors TFTs that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop ES layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene Teflon and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity. View Full-Text

Keywords: indium gallium zinc oxide IGZO; thin film transistors TFTs; passivation layer; Teflon; SiO2 indium gallium zinc oxide IGZO; thin film transistors TFTs; passivation layer; Teflon; SiO2





Author: Ching-Lin Fan 1,2,* , Ming-Chi Shang 1, Bo-Jyun Li 1, Yu-Zuo Lin 2, Shea-Jue Wang 3, Win-Der Lee 4 and Bohr-Ran Hung 1

Source: http://mdpi.com/



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