Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire SubstrateReport as inadecuate




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Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan





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Academic Editor: Dirk Poelman

Abstract The crystal quality and light output power of GaN-based light-emitting diodes LEDs grown on concave patterned sapphire substrate CPSS were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space percentage of c-plane. However, when the pattern space decreased to 0.41 μm S0.41-GaN, the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency. View Full-Text

Keywords: GaN-based LED; concave patterned sapphire substrate; crystal quality; light output power GaN-based LED; concave patterned sapphire substrate; crystal quality; light output power





Author: YewChung Sermon Wu * , A. Panimaya Selvi Isabel, Jian-Hsuan Zheng, Bo-Wen Lin, Jhen-Hong Li and Chia-Chen Lin

Source: http://mdpi.com/



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