Synthesis and Thermoelectric Properties in the 2D Ti1 – xNbxS3 TrichalcogenidesReport as inadecuate




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Laboratoire CRISMAT, UMR 6508 CNRS-ENSICAEN, 6 bd Maréchal Juin, Caen Cedex 4 14050, France





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Academic Editor: Chunlei Wan

Abstract A solid solution of Ti1 − xNbxS3 composition x = 0, 0.05, 0.07, 0.10 was synthesized by solid-liquid-vapor reaction followed by spark plasma sintering. The obtained compounds crystallize in the monoclinic ZrSe3 structure type. For the x = 0.07 sample, a mixture of both A and B variants of the MX3 structure is evidenced by transmission electron microscopy. This result contrasts with those of pristine TiS3, prepared within the same conditions, which crystallizes as a large majority of A variant. Thermoelectric properties were investigated in the temperature range 323 to 523 K. A decrease in the electrical resistivity and absolute value of the Seebeck coefficient is observed when increasing x due to electron doping. The lattice component of the thermal conductivity is effectively reduced by the Nb for Ti substitution through a mass fluctuation effect and-or a disorder effect created by the mixture of both A and B variants. Due to the low carrier concentration and the semiconductor character of the doped compounds, the too low power factor values leads to ZT values that remain smaller by a factor of 50 than those of the TiS2 layered compound. View Full-Text

Keywords: sulfur; transition metal sulfides; niobium; titanium trisulfide; thermoelectric; electrical properties; thermal conductivity; Seebeck coefficient sulfur; transition metal sulfides; niobium; titanium trisulfide; thermoelectric; electrical properties; thermal conductivity; Seebeck coefficient





Author: Patrick R. N. Misse, David Berthebaud, Oleg I. Lebedev, Antoine Maignan and Emmanuel Guilmeau *

Source: http://mdpi.com/



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