Synthesis of Ga-Doped ZnO Nanorods by Hydrothermal Method and Their Application to Ultraviolet PhotodetectorReport as inadecuate




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1

Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan

2

Institute of Microelectronics and Department of Electrical Engineering, Center for Micro-Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

3

Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan





*

Author to whom correspondence should be addressed.



Academic Editor: Chien-Hung Liu

Abstract In this study, high-density single crystalline Ga-doped ZnO GZO nanorods were grown on glass substrate by the hydrothermal method. The structural and optoelectronic properties of Ga-doped ZnO nanorods were studied. The microstructure of the GZO was studied by scanning electrical microscope SEM. The structural characteristics of the GZO were measured by X-ray diffraction XRD. It was found that the peaks related to the wurtzite structure ZnO 100, 002, and 101 diffraction peaks. The 002 peak indicates that the nanorods were preferentially oriented in the c-axis direction. The existence of Ga was examined by energy diffraction spectra EDS, indicating the Ga atom entered into the ZnO lattice. The optical properties of the GZO were measured by photoluminescence spectra. It was found that all GZO nanorod arrays showed two different emissions, including UV ultraviolet and green emissions. GZO nanorod metal-semiconductor-metal MSM ultraviolet UV photodetectors PD were also fabricated. The photo-current and dark-current constant ratio of the fabricated PD was approximately 15.2 when biased at 1 V. View Full-Text

Keywords: Ga doped ZnO nanorod; hydrothermal; photodetector; Ga doped ZnO nanorod; hydrothermal; photodetector;





Author: Sheng-Joue Young 1,* , Chia-Lin Chiou 1, Yi-Hsing Liu 2 and Liang-Wen Ji 3

Source: http://mdpi.com/



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