Technology and Reliability of Normally-Off GaN HEMTs with p-Type GateReport as inadecuate


Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate


Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate - Download this document for free, or read online. Document in PDF available to download.

1

Department of Information Engineering, University of Padova, via Gradenigo 6-B, 35131 Padova, Italy

2

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany





*

Author to whom correspondence should be addressed.



Academic Editors: Alberto Castellazzi and Andrea Irace

Abstract GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: i the trapping effects specific for the p-GaN gate; ii the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; iii the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues. View Full-Text

Keywords: gallium nitride; transistor; p-GaN; normally-off; reliability; degradation gallium nitride; transistor; p-GaN; normally-off; reliability; degradation





Author: Matteo Meneghini 1,* , Oliver Hilt 2, Joachim Wuerfl 2 and Gaudenzio Meneghesso 1

Source: http://mdpi.com/



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